IndiumV3, Main, Repository, bibRecord, 00C234

Development of radio-frequency magnetron sputtered indium molybdenum oxide

Identifieur interne : 00C234 ( Main/Repository ); précédent : 00C233; suivant : 00C235

Development of radio-frequency magnetron sputtered indium molybdenum oxide

Auteurs : RBID : Pascal:03-0316144

Descripteurs français

Pascal (Inist)
- 8105H, 8115C, 7361L, 7866L, 6855J, 7350D, 7840F, 7820C, 7960B, Etude expérimentale, Indium composé, Molybdène, Dépôt pulvérisation, Semiconducteur, Croissance semiconducteur, Couche mince semiconductrice, Densité porteur charge, Mobilité électron, Conductivité électrique, Spectre photoélectron RX, Spectre visible, Transparence.
Wicri :
- concept : Molybdène.

English descriptors

KwdEn :
- Carrier density, Electrical conductivity, Electron mobility, Experimental study, Indium compounds, Molybdenum, Semiconductor growth, Semiconductor materials, Semiconductor thin films, Sputter deposition, Transparency, Visible spectra, X-ray photoelectron spectra.

Abstract

Molybdenum-doped indium oxide (IMO), an n-type transparent conducting oxide, was deposited using radio-frequency magnetron sputtering. The effects of oxygen concentration in an argon ambient and substrate temperature on film properties were studied. Compared to undoped indium oxide (In₂O₃) films, IMO films demonstrated higher electron mobility and more than an order-of-magnitude higher carrier concentration. The highest conductivity IMO film demonstrated a mobility of 44 cm2V-1s-1 and a carrier concentration of 1.3×10²⁰ cm^-3. The properties of both In₂O₃ and IMO films were very sensitive to the oxygen concentration, but not to the substrate temperature. Average visible transmittance of In₂O₃ and IMO films were 86% and 80%, respectively. Both optical and x-ray photoelectron spectroscopy analyses indicate a possible second phase in IMO films deposited at lower (≤1%) oxygen concentrations. © 2003 American Vacuum Society.

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Pascal:03-0316144

Le document en format XML

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<author><name sortKey="Yoshida, Y" uniqKey="Yoshida Y">Y. Yoshida</name>
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<author><name sortKey="Gessert, T A" uniqKey="Gessert T">T. A. Gessert</name>
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<wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea>
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<author><name sortKey="Perkins, C L" uniqKey="Perkins C">C. L. Perkins</name>
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<author><name sortKey="Coutts, T J" uniqKey="Coutts T">T. J. Coutts</name>
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<front><div type="abstract" xml:lang="en">Molybdenum-doped indium oxide (IMO), an n-type transparent conducting oxide, was deposited using radio-frequency magnetron sputtering. The effects of oxygen concentration in an argon ambient and substrate temperature on film properties were studied. Compared to undoped indium oxide (In<sub>2</sub>
O<sub>3</sub>
) films, IMO films demonstrated higher electron mobility and more than an order-of-magnitude higher carrier concentration. The highest conductivity IMO film demonstrated a mobility of 44 cm2V-1s-1 and a carrier concentration of 1.3×10<sup>20</sup>
 cm<sup>-3</sup>
. The properties of both In<sub>2</sub>
O<sub>3</sub>
 and IMO films were very sensitive to the oxygen concentration, but not to the substrate temperature. Average visible transmittance of In<sub>2</sub>
O<sub>3</sub>
 and IMO films were 86% and 80%, respectively. Both optical and x-ray photoelectron spectroscopy analyses indicate a possible second phase in IMO films deposited at lower (≤1%) oxygen concentrations. © 2003 American Vacuum Society.</div>
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<fC01 i1="01" l="ENG"><s0>Molybdenum-doped indium oxide (IMO), an n-type transparent conducting oxide, was deposited using radio-frequency magnetron sputtering. The effects of oxygen concentration in an argon ambient and substrate temperature on film properties were studied. Compared to undoped indium oxide (In<sub>2</sub>
O<sub>3</sub>
) films, IMO films demonstrated higher electron mobility and more than an order-of-magnitude higher carrier concentration. The highest conductivity IMO film demonstrated a mobility of 44 cm2V-1s-1 and a carrier concentration of 1.3×10<sup>20</sup>
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O<sub>3</sub>
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<fC03 i1="22" i2="3" l="FRE"><s0>Transparence</s0>
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Development of radio-frequency magnetron sputtered indium molybdenum oxide

Development of radio-frequency magnetron sputtered indium molybdenum oxide

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

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